【紧跟“封装技术”发展趋势】PCIM Asia 国际研讨会6.28议程安排

时间

主题&演讲嘉宾

09:30

The Next Generation High  Voltage Package and IGBT/Diode Technologies
Sven Matthias, ABB Switzerland,  Switzerland

09:55

Selection of Materials for IGBT  Modules to achieve Stable Short Circuit Failure Behaviour
Jianfeng Li, University of Nottingham,  Great Britain

10:20

Cu Paste Sinter joining for  Die-attach of High TJ Power Devices Realized by PEG Solvent Optimization
Hiroki Yoshikawa, Osaka University,  Japan

10:45-11：00 Coffee Break

11:00

Compact and Reliable Medium  Voltage Inverter Power Cell without Cabling
 Bo Chen, SEMIKRON Electronics (Zhuhai), China

11:25

Integrating a Real Time TVJ  Calculation into an IPM
 Yizheng Zhou, Infineon Technologies, Germany